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Investigation of individual defects in semiconductors using correlative Raman and photoluminescence (PL) imaging
发布时间:2019-05-21 浏览:

报告题目Investigation of individual defects in semiconductors using correlative Raman and photoluminescence (PL) imaging

报告人:  Yong ZhangElectrical and Computer Engineering DepartmentElectrical and Computer Engineering Department University of North Carolina at Charlotte, Charlotte, NC 28223, USA

报告时间:2019521日星期二上午10:30-11:30

报告地点:激光光谱研究所三层报告厅

报告简介:

In commonly used PL imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that offered by the optical system, such as diffraction limit, when the former is larger than the latter, typically occurring in a high quality material. We demonstrate that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of dislocation defects in GaAs, achieving a 10-fold improvement in resolution when a diffraction-limited confocal system is used. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and nonradiative recombination rate near a dislocation defect, which has not been possible using other techniques. Hu et al., Light: Sci. & Appl. 7, 23 (2018).

报告人简介

Yong Zhang received B.S. and M.S. in Physics from Xiamen University, and Ph.D. in Physics from Dartmouth College. He is Bissell Distinguished Professor with ECE Dept of UNC-Charlotte since 2009, and adjunct Professor of Physics Dept. Prior to the current position, he was Senior Scientist with National Renewable Energy Laboratory (NREL). Other positions he has held include “Chaires d'excellence” of Nanosciences Foundation (France) 2010 – 2012; Academic Committee member of State Key Laboratory of Photovoltaic Science and Technology (China) 2010-2015; Guest Professor of Institute of Semiconductors, CAS, and of Xiamen University; CAS Oversee Review Committee Members. His current research activities include semiconductor nanostructures and devices, type II semiconductor superlattices, inorganic-organic hybrid materials, 2D materials, solid state lighting materials and devices, and fundamental sciences in solid state physics.  He has published over 210 papers and book chapters, with H index 41. He is an APS Fellow. yong.zhang@uncc.edu.